Hamamatsu designs and manufactures various types of image sensors that cover a wide range of intensity levels and spectral response ranges. Devices operate from near infrared (NIR) at 2.6 µm, through visible and ultraviolet (UV) down to soft X-rays and hard X-rays at several hundred keV. Our image sensors are made from either silicon or InGaAs. The Si image sensors are available as a CCD array, CMOS linear array and NMOS linear array. Large 2D CMOS arrays are also available for area X-ray imaging. InGaAs and CCD arrays can be cooled with a built-in thermoelectric cooler. Detector heads and signal processing boards are available for most sensors. These devices are used in non-destructive testing, process monitoring, semiconductor tools, Raman spectroscopy, microscopy, optical communications, spectrophotometry, encoders and X-ray imaging.